• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
PZUxB series
main product photo

The image is for reference only

Please refer to the product specifications

PZUxB series
  • SKU:
    PZU9.1B,115
  • Short Description:
      Single Zener diodes in a SOD323F package
  • Description:
     

    General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead Surface Mounted Device (SMD) plastic package.

  • Datasheet:
    Download the Datasheet
Stock: 345000
Qty:
Price: $0.003
Total: $0.003
Price
Qty Price Total price
1 $0.003 $0.003
500 $0.0027 $1.3500
1000 $0.0026 $2.6000
3000 $0.0025 $7.5000

Features

  • Total power dissipation: 550 mW

  • Tolerance series: B: approximately 5 %; B1, B2, B3: sequential, approximately 2 %

  • Small plastic package suitable for surface mounted design

  • Wide working voltage range: nominal 2.4 V to 36 V

  • Very low leakage current for a given reverse voltage for types PZU5.1B - PZU10B

  • AEC-Q101 qualified

Applications

  • General regulation functions

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P