The image is for reference only
Please refer to the product specifications
-
SKU:
PSMN1R5-40YSDX
-
Date Code:
2327+
-
Short Description:
40YSD - N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology
-
Description:
240 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
- Datasheet:
Features
240 A continuous ID(max) rating
Avalanche rated, 100% tested at IAS = 190 A
Strong SOA (linear-mode) rating
NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'
Low QRR, QG and QGD for high system efficiency and low EMI designs
Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage
High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints
Low parasitic inductance and resistance
Applications
High-performance synchronous rectification
DC-to-DC converters
High performance and high efficiency server power supply
Brushless DC motor control
Battery protection
Load-switch and eFuse
Inrush management, hotswap
