• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
PBRP113ET
main product photo

The image is for reference only

Please refer to the product specifications

PBRP113ET
  • SKU:
    PBRP113ET,215
  • Short Description:
      40 V, 600 mA PNP PB RET; R1 = 1 kΩ, R2 = 1 kΩ
  • Description:
     

    PNP low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

    NPN complement: PBRN113ET

  • Datasheet:
    Download the Datasheet
Stock: 21000
Qty:
Price: $0.0092
Total: $0.0092
Price
Qty Price Total price
1 $0.0092 $0.0092
500 $0.0084 $4.2000
1000 $0.008 $8.0000
3000 $0.0076 $22.8000

Features

  • 600 mA output current capability

  • Low collector-emitter saturation voltage VCEsat

  • High current gain hFE

  • Reduces component count

  • Built-in bias resistors

  • Reduces pick and place costs

  • Simplifies circuit design

  • ± 10 % resistor ratio tolerance

Applications

  • Digital application in automotive and industrial segments

  • Switching loads

  • Medium current peripheral driver

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P