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Please refer to the product specifications
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SKU:
BUK7V4R2-40HX
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Date Code:
2346+
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Short Description:
40H - Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)
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Description:
Dual, standard level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101.
An internal connection is made between the source (S1) of the high-side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge switch in high-performance automotive PWM applications.
- Datasheet:
Features
- LFPAK56D package with half-bridge configuration enables:
Reduced PCB layout complexity
PCB shrinkage through reduced component footprint for 3-phase motor drive
Improved system level Rth(j-amb) due to optimized package design
Lower parasitic inductance to support higher efficiency
Footprint compatibility with LFPAK56D Dual package
- Advanced AEC-Q101 grade Trench 9 silicon technology:
- Low power losses, high power density
- Superior avalanche performance
Repetitive avalanche rated
LFPAK copper clip packaging provides high robustness and reliability
Gull wing leads support high manufacturability and Automated Optical Inspection (AOI)
Applications
12 V automotive systems
Powertrain, chassis, body and infotainment applications
Brushless or brushed DC motor drive
DC-to-DC systems
LED lighting