• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
BUK7K8R7
main product photo

The image is for reference only

Please refer to the product specifications

BUK7K8R7
  • SKU:
    BUK7K8R7-40EX
  • Short Description:
      40E - Dual N-channel 40 V, 8.5 mΩ standard level MOSFET
  • Description:
     

    Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

  • Datasheet:
    Download the Datasheet
Stock: 1932000
Qty:
Price: $0.2934
Total: $0.2934
Price
Qty Price Total price
1 $0.2934 $0.2934
500 $0.2668 $133.4000
1000 $0.2541 $254.1000
3000 $0.242 $726.0000

Features

  • Dual MOSFET

  • Q101 compliant

  • Repetitive avalanche rated

  • Suitable for thermally demanding environments due to 175 °C rating

  • True standard level gate with VGS(th) of greater than 1 V at 175 °C

Applications

  • 12 V Automotive systems

  • Motors, lamps and solenoid control

  • Transmission control

  • Ultra high performance power switching

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P