• My Wishlist
  • Register
  • English
Toggle Nav
Cart
BOM Management
Search
Advanced Search
  • Compare Products
Menu
Account
BOM New Arrivals Specials Automotive
BC847B
main product photo

The image is for reference only

Please refer to the product specifications

BC847B
  • SKU:
    BC847B,215
  • Date Code:
    2515+
  • Short Description:
      45 V, 100 mA NPN general-purpose transistors
  • Description:
     

    NPN general-purpose transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

    Table 1. Product overview

    Type number1

    Package

    PNP complement

    Nexperia

    JEITA

    JEDEC

    BC847

    SOT23

    -

    TO-236AB

    BC857

    BC847A

    BC857A

    BC847B

    BC857B

    BC847C

    BC857C

    1 Valid for all available selection groups.
  • Datasheet:
    Download the Datasheet
Stock: 50000000
Qty:
Price: $0.0043
Total: $0.0043
Price
Qty Price Total price
1 $0.0043 $0.0043
500 $0.0039 $1.9500
1000 $0.0037 $3.7000
3000 $0.0035 $10.5000

Features

  • General-purpose transistors

  • SMD plastic packages

  • Three different gain selections

Applications

  • General-purpose switching and amplification

Datasheet
Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET
GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode
PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P