BAT46WJ

JavaScript seems to be disabled in your browser. For the best experience on our site, be sure to turn on Javascript in your browser.

BOM New Arrivals Specials Automotive

Skip to the end of the images gallery

BAT46WJ

main product photo

The image is for reference only

Please refer to the product specifications

BAT46WJ

SKU:
BAT46WJ-QF
Short Description:
Q - Schottky barrier diode
Description:

Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a very small and flat lead SOD323F (SC-90) Surface-Mounted Device (SMD) plastic package.
Datasheet:
Download the Datasheet

Skip to the beginning of the images gallery

Stock: 92369999

Qty:

Price: $0.0296

Total: $0.0296

Price

Qty Price Total price: 1 $0.0296 $0.0296; 500 $0.0269 $13.4500; 1000 $0.0256 $25.6000; 3000 $0.0243 $72.9000

Features

Low forward voltage
Reverse voltage V_R ≤ 100 V
Very small and flat lead SMD plastic package
Low capacitance
Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

High-speed switching
Line termination
Voltage clamping
Reverse polarity protection

Datasheet

Download the Datasheet

Up-Sells

GAN041

GAN041-650WSBQ

650WSB - 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package

GAN063

GAN063-650WSAQ

650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET

GAN080

GAN080-650EBEZ

650EBE - 650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN140

GAN140-650EBEZ

650EBE - 650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650EBEZ

650EBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package

GAN190

GAN190-650FBEZ

650FBE - 650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package

NGW30T60M3DF

NGW30T60M3DFQ

600 V, 30 A trench field-stop IGBT with full rated silicon diode

PSC1065K

PSC1065KQ

650 V, 10 A SiC Schottky diode in TO-220-2 R2P